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NDF05N50ZH Datasheet (PDF) 2 Page - ON Semiconductor

Part number NDF05N50ZH
Description  Power MOSFET 500V 5A 1.5 Ohm Single N-Channel TO-220FP Optimized, TO-220 FULLPACK, 3-LEAD, 50-TUBE
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Manufacturer  ON Semiconductor
Direct Link  http://www.onsemi.com/PowerSol...
Logo ON Semiconductor

NDF05N50ZH Datasheet (HTML) 2 Page - ON Semiconductor

 
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NDF05N50Z, NDD05N50Z
THERMAL RESISTANCE
Parameter
Symbol
JunctiontoCase (Drain)
NDF05N50Z
NDD05N50Z
RqJC
JunctiontoAmbient Steady State
(Note 3) NDF05N50Z
(Note 4) NDD05N50Z
(Note 3) NDD05N50Z1
RqJA
3. Insertion mounted
4. Surface mounted on FR4 board using 1sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
Value
4.2
1.5
50
38
80
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage BVDSS
VGS = 0 V, ID = 1 mA
500
Breakdown Voltage Temperature Co- DBVDSS/
Reference to 25°C,
0.6
efficient
DTJ
ID = 1 mA
DraintoSource Leakage Current
IDSS
VDS = 500 V, VGS = 0 V
25°C
150°C
V
V/°C
1
mA
50
GatetoSource Forward Leakage
ON CHARACTERISTICS (Note 5)
Static DraintoSource
OnResistance
IGSS
RDS(on)
VGS = ±20 V
VGS = 10 V, ID = 2.2 A
±10
mA
1.25
1.5
W
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 6)
Output Capacitance (Note 6)
Reverse Transfer Capacitance
(Note 6)
VGS(th)
gFS
Ciss
Coss
Crss
VDS = VGS, ID = 50 mA
VDS = 15 V, ID = 2.5 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
3.0
3.9
4.5
V
3.5
S
421
530
632
pF
50
68
80
8
15
25
Total Gate Charge (Note 6)
Qg
GatetoSource Charge (Note 6)
Qgs
GatetoDrain (“Miller”) Charge
Qgd
(Note 6)
VDD = 250 V, ID = 5 A,
VGS = 10 V
9
18.5
28
nC
2
4
6
5
10
15
Plateau Voltage
VGP
Gate Resistance
Rg
RESISTIVE SWITCHING CHARACTERISTICS
TurnOn Delay Time
td(on)
Rise Time
tr
TurnOff Delay Time
td(off)
Fall Time
tf
VDD = 250 V, ID = 5 A,
VGS = 10 V, RG = 5 W
6.5
V
1.5
4.5
8
W
11
ns
15
24
14
SOURCEDRAIN DIODE CHARACTERISTICS (TC = 25°C unless otherwise noted)
Diode Forward Voltage
VSD
IS = 5 A, VGS = 0 V
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
trr
VGS = 0 V, VDD = 30 V
Qrr
IS = 5 A, di/dt = 100 A/ms
255
ns
1.25
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Width 380 ms, Duty Cycle 2%.
6. Guaranteed by design.
www.onsemi.com
2

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